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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
3.0 0.3
PACKAGE DIMENSIONS
(in millimeter) 10.6 MAX. 10.0 4.8 MAX. 1.3 0.2
FEATURES
3.6 0.2
5.9 MIN. 6.0 MAX.
RDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 m MAX. (@ VGS = 4 V, ID = 15 A)
4 1.3 0.2 0.75 0.1 2.54 123
* Low Ciss Ciss = 1500 pF TYP. * Built-in G-S Gate Protection Diodes * High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
12.7 MIN. 15.5 MAX.
* Low On-Resistance
0.5 0.2 2.8 0.2
2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX.
8.5 0.2
1.3 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) 60 20 30 120 75 1.5 150 30 90 V V A A W W C
1.0 0.5
1.5 MAX.
1.4 0.2
1.0 0.3 (2.54) (2.54) 123
1.1 0.4 3.0 0.5
R) .5 (0 .8R) (0
0.5 0.2
Total Power Dissipation (Tc = 25 C) PT1 Total Power Dissipation (TA = 25 C) PT2 Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % Tch Tstg IAS EAS
-55 to +150 C A mJ
MP-25Z(SURFACE MOUNT TYPE)
Drain
2.8 0.2
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
Gate
Body Diode
Gate Protection Diode Source
The information in this document is subject to change without notice. Document No. TC-2492 (O. D. No. TC-8030) Date Published November 1994 P Printed in Japan
(c)
1994
2SK2411, 2SK2411-Z
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1500 720 190 20 260 130 150 50 5.0 15 1.1 110 320 1.0 15 MIN. TYP. 31 40 1.5 27 10 10 MAX. 40 60 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 15 A VGS = 4 V, ID = 15 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 15 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 15 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 30 A VDD = 48 V VGS = 10 V IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 di/dt = 100 A/s
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
D.U.T. RG = 25 PG VGS = 20 V 0 IAS ID VDD BVDSS 50
L PG. VDD VGS 0 VDS t t = 1 s Duty Cycle 1 % Starting Tch RG RG = 10
RL
VGS
Wave Form
VGS
10 % 0 VGS (on)
90 %
VDD ID
Wave Form
ID
10 % 0 td (on)
90 %
90 % 10 %
ID
tr ton td (off) toff tf
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2411, 2SK2411-Z
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
80
80
60
60
40
40
20
20
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Tc - Case Temperature - C
Tc - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000 100 90
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V Pulsed
PW
ID - Drain Current - A
ID (pulse) 100
10
ID - Drain Current - A
=
80 70 60 50 40 30 20 VGS = 4 V VGS = 6 V
d ite ) mV Li 10 n) ID (DC) (o S = S G Po RD t V w (a
10
s
0 s
1 m s
10
er
Di
Tc = 25 C Single Pulse 1 0.1
m s D ss C ipa tio n Lim
10
10
ite
d
100
10 0 2 4 6 8 10 12
1
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V
ID - Drain Current - A
100
10
TA = -25 C 25 C 125 C
1 0
5 VGS - Gate to Source Voltage - V
10
3
2SK2411, 2SK2411-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth (t) - Transient Thermal Resistance - C/W
100 Rth (ch-a) = 83.3 C/W 10
1
Rth (ch-c) = 1.67 C/W
0.1
0.01 10
100
1m
10 m
100 m
1
10
Single Pulse 100 1000
PW - Pulse Width - s
|yfs| - Forward Transfer Admittance - S
1000 TA = -25 C 25 C 75 C 125 C
RDS (on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed 50 40 30 20 10 0 0 5 10 15 20 VGS - Gate to Source Voltage - V
100
ID = 15 A
10
1 1 10 ID - Drain Current - A 100
RDS (on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 50 40 30 20 10 0
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS (off) - Gate to Source Cutoff Voltage - V
Pulsed
2.0
VDS = 10 V ID = 1 mA
1.5
VGS = 4 V VGS = 10 V
1.0
0.5
1
10 ID - Drain Current - A
100
0 -50
0
50
100
150
Tch - Channel Temperature - C
4
2SK2411, 2SK2411-Z
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 1000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
RDS (on) - Drain to Source On-State Resistance - m
60 50 40 30 20 10 0 -50 ID = 15 A -25 0 25 50 75 100 125 150 VGS = 10 V VGS = 4 V
ISD - Diode Forward Current - A
70
100 10 V VGS = 0 10
1 0 1.0 2.0 3.0 VSD - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
Ciss 1000 Coss
td (on), tr, td (off), tf - Switching Time - ns
VGS = 0 f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF
td (off) 100 tf tr 10 td (on) VDD = 30 V VGS = 10 V RG = 10 0.1 1.0 10 100
Crss 100
10 1 10 VDS - Drain to Source Voltage - V 100
1.0
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 di/dt = 50 A/s VGS = 0 80
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 30 A VDD = 48 V
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Diode - ns
60 50
12 10 VGS 8
100
40 VDS 30 20 10 0 0 10 20 30 40 50 60 70 80
6 4 2
10 0.1
1.0
10
100
ID - Drain Current - A
Qg - Gate Charge - nC
5
VGS - Gate to Source Voltage - V
70
14
2SK2411, 2SK2411-Z
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 VGS = 20 V 0 IAS 30 A
IAS - Single Avalanche Energy - mJ
dt - Energy Derating Factor - %
IAS = 30 A
80
EA
10
S
=
90
60
mJ
40
1.0 10
VDD = 30 V VGS = 20 V 0 RG = 25 100 1m 10 m
20 0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
2SK2411, 2SK2411-Z
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2411, 2SK2411-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc.
M4 92.6

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